Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2N6768T1
Manufacturer Part Number | 2N6768T1 |
---|---|
Future Part Number | FT-2N6768T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N6768T1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-254AA |
Package / Case | TO-254-3, TO-254AA (Straight Leads) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N6768T1 Weight | Contact Us |
Replacement Part Number | 2N6768T1-FT |
UPA2600T1R-E2-AX
Renesas Electronics America
UPA2630T1R-E2-AX
Renesas Electronics America
UPA2631T1R-E2-AX
Renesas Electronics America
UPA2814T1S-E2-AT
Renesas Electronics America
UPA2815T1S-E2-AT
Renesas Electronics America
UPA2816T1S-E2-AT
Renesas Electronics America
UPA2822T1L-E1-AT
Renesas Electronics America
ZVN4424GQTA
Diodes Incorporated
ZXMN2F30FHQTA
Diodes Incorporated
ZXMN3A14FQTA
Diodes Incorporated
M2GL050-1FG484
Microsemi Corporation
ICE5LP4K-CM36ITR50
Lattice Semiconductor Corporation
AGL250V5-VQG100I
Microsemi Corporation
5SGXMA4H3F35I3LN
Intel
XC5VLX50-2FF324I
Xilinx Inc.
XC7VX690T-2FFG1157I
Xilinx Inc.
XC2VP2-6FF672C
Xilinx Inc.
LFE3-95EA-9FN1156C
Lattice Semiconductor Corporation
EP3SL110F780I4LN
Intel
EP1C20F324C8N
Intel