Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2N6661-2
Manufacturer Part Number | 2N6661-2 |
---|---|
Future Part Number | FT-2N6661-2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N6661-2 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 90V |
Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N6661-2 Weight | Contact Us |
Replacement Part Number | 2N6661-2-FT |
IRFZ48RSPBF
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