Manufacturer Part Number | 2N6052G |
---|---|
Future Part Number | FT-2N6052G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N6052G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V |
Power - Max | 150W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-204 (TO-3) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N6052G Weight | Contact Us |
Replacement Part Number | 2N6052G-FT |
MJE253G
ON Semiconductor
MJE243G
ON Semiconductor
2N4919
ON Semiconductor
2N4921
ON Semiconductor
2N5190
ON Semiconductor
2N5194G
ON Semiconductor
2N5655
ON Semiconductor
2N5655G
ON Semiconductor
2N6034
ON Semiconductor
2N6038
ON Semiconductor
XC7A35T-2FGG484C
Xilinx Inc.
A54SX32A-2FGG256
Microsemi Corporation
5SGXEA7N1F40C2LN
Intel
5SGSED6K2F40I3LN
Intel
5SGSED6K2F40I3N
Intel
5SGXEB6R2F40C2LN
Intel
LCMXO2-2000ZE-1MG132C
Lattice Semiconductor Corporation
5AGXFB3H4F35C5N
Intel
10AX022E3F29E1SG
Intel
EPF10K50SQC208-2X
Intel