Manufacturer Part Number | 2N5962 |
---|---|
Future Part Number | FT-2N5962 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N5962 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 2nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 10mA, 5V |
Power - Max | 1.5W |
Frequency - Transition | 100MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5962 Weight | Contact Us |
Replacement Part Number | 2N5962-FT |
2N5838
Microsemi Corporation
2N5840
Microsemi Corporation
2N5868
Microsemi Corporation
2N5872
Microsemi Corporation
2N5874
Microsemi Corporation
2N5875
Microsemi Corporation
2N5876
Microsemi Corporation
2N5877
Microsemi Corporation
2N5879
Microsemi Corporation
2N5880
Microsemi Corporation
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel