Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / 2N5770_D26Z
Manufacturer Part Number | 2N5770_D26Z |
---|---|
Future Part Number | FT-2N5770_D26Z |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N5770_D26Z Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
Gain | 15dB |
Power - Max | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8mA, 10V |
Current - Collector (Ic) (Max) | 50mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5770_D26Z Weight | Contact Us |
Replacement Part Number | 2N5770_D26Z-FT |
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