Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5551TFR
Manufacturer Part Number | 2N5551TFR |
---|---|
Future Part Number | FT-2N5551TFR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N5551TFR Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 625mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5551TFR Weight | Contact Us |
Replacement Part Number | 2N5551TFR-FT |
ZTX718STOA
Diodes Incorporated
ZTX718STOB
Diodes Incorporated
ZTX749STOA
Diodes Incorporated
ZTX749STOB
Diodes Incorporated
ZTX751STOB
Diodes Incorporated
ZTX753STOA
Diodes Incorporated
ZTX753STOB
Diodes Incorporated
ZTX755
Diodes Incorporated
ZTX755STOB
Diodes Incorporated
ZTX755STZ
Diodes Incorporated
EPF6024ATC144-2N
Intel
XC2VP2-5FG456I
Xilinx Inc.
A54SX32A-FFG144
Microsemi Corporation
10M50DAF256C8G
Intel
EP4SGX530KH40C3N
Intel
5SGXEA7K3F35I3N
Intel
XC5VLX50T-1FFG1136CES
Xilinx Inc.
XC7S6-2CPGA196I
Xilinx Inc.
A54SX08A-FTQG100
Microsemi Corporation
LFE3-35EA-6FN672C
Lattice Semiconductor Corporation