Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5551CBU
Manufacturer Part Number | 2N5551CBU |
---|---|
Future Part Number | FT-2N5551CBU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N5551CBU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 625mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5551CBU Weight | Contact Us |
Replacement Part Number | 2N5551CBU-FT |
ZTX692BSTZ
Diodes Incorporated
ZTX718STZ
Diodes Incorporated
ZTX751STZ
Diodes Incorporated
ZTX753STZ
Diodes Incorporated
ZTX757STZ
Diodes Incorporated
ZTX758
Diodes Incorporated
ZTX788A
Diodes Incorporated
ZTX790ASTZ
Diodes Incorporated
ZTX795A
Diodes Incorporated
ZTX795ASTZ
Diodes Incorporated
A54SX08-TQ144
Microsemi Corporation
5SEE9F45C2N
Intel
5SGXMA7H2F35C3
Intel
EP2SGX90EF1152I4
Intel
XC7K160T-2FBG484C
Xilinx Inc.
XC4VLX15-12FFG676C
Xilinx Inc.
A3PE1500-1FGG676
Microsemi Corporation
LFXP2-17E-6QN208C
Lattice Semiconductor Corporation
10AX115R3F40E2SG
Intel
10AX022E3F29I1HG
Intel