Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5551BU
Manufacturer Part Number | 2N5551BU |
---|---|
Future Part Number | FT-2N5551BU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N5551BU Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 625mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5551BU Weight | Contact Us |
Replacement Part Number | 2N5551BU-FT |
PN2222ABU
ON Semiconductor
SS8050CBU
ON Semiconductor
SS8050DBU
ON Semiconductor
SS8550DBU
ON Semiconductor
SS9014CBU
ON Semiconductor
ZTX789A
Diodes Incorporated
ZTX458
Diodes Incorporated
KSC2330YTA
ON Semiconductor
KSD1616AGBU
ON Semiconductor
ZTX605
Diodes Incorporated
EPF6024ATC144-2N
Intel
XC2VP2-5FG456I
Xilinx Inc.
A54SX32A-FFG144
Microsemi Corporation
10M50DAF256C8G
Intel
EP4SGX530KH40C3N
Intel
5SGXEA7K3F35I3N
Intel
XC5VLX50T-1FFG1136CES
Xilinx Inc.
XC7S6-2CPGA196I
Xilinx Inc.
A54SX08A-FTQG100
Microsemi Corporation
LFE3-35EA-6FN672C
Lattice Semiconductor Corporation