Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5401-AP
Manufacturer Part Number | 2N5401-AP |
---|---|
Future Part Number | FT-2N5401-AP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N5401-AP Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
Power - Max | 1.5W |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N5401-AP Weight | Contact Us |
Replacement Part Number | 2N5401-AP-FT |
JANTXV2N6298
Microsemi Corporation
JANTXV2N6300
Microsemi Corporation
JANTXV2N6306
Microsemi Corporation
JANTXV2N6308
Microsemi Corporation
JANTXV2N6383
Microsemi Corporation
JANTXV2N6384
Microsemi Corporation
JANTXV2N6385
Microsemi Corporation
JANTXV2N6674
Microsemi Corporation
JANTXV2N6675
Microsemi Corporation
JANTXV2N6676
Microsemi Corporation