Home / Products / Discrete Semiconductor Products / Transistors - JFETs / 2N4393-E3
Manufacturer Part Number | 2N4393-E3 |
---|---|
Future Part Number | FT-2N4393-E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N4393-E3 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Voltage - Breakdown (V(BR)GSS) | 40V |
Drain to Source Voltage (Vdss) | - |
Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 20V |
Current Drain (Id) - Max | - |
Voltage - Cutoff (VGS off) @ Id | 500mV @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V |
Resistance - RDS(On) | 100 Ohms |
Power - Max | 1.8W |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-206AA (TO-18) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N4393-E3 Weight | Contact Us |
Replacement Part Number | 2N4393-E3-FT |
PMBFJ108,215
NXP USA Inc.
PMBFJ111,215
NXP USA Inc.
PMBFJ112,215
NXP USA Inc.
PMBFJ113,215
NXP USA Inc.
PMBFJ174,215
NXP USA Inc.
PMBFJ175,215
NXP USA Inc.
PMBFJ176,215
NXP USA Inc.
PMBFJ310,215
NXP USA Inc.
2SK3320-BL(TE85L,F
Toshiba Semiconductor and Storage
2SK3320-Y(TE85L,F)
Toshiba Semiconductor and Storage