Manufacturer Part Number | 2N3646 |
---|---|
Future Part Number | FT-2N3646 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N3646 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 30mA, 300mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 400mV |
Power - Max | 200mW |
Frequency - Transition | 350MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-106-3 Domed |
Supplier Device Package | TO-106 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N3646 Weight | Contact Us |
Replacement Part Number | 2N3646-FT |
2N657
Microsemi Corporation
2N6648
Microsemi Corporation
2N6649
Microsemi Corporation
2N6650
Microsemi Corporation
2N6673
Microsemi Corporation
2N6674
Microsemi Corporation
2N6675
Microsemi Corporation
2N6676
Microsemi Corporation
2N6678
Microsemi Corporation
2N6678T1
Microsemi Corporation
AGLN015V2-QNG68I
Microsemi Corporation
LCMXO256C-4TN100I
Lattice Semiconductor Corporation
XCS30XL-4VQG100C
Xilinx Inc.
APA300-FG256I
Microsemi Corporation
A54SX16P-VQ100I
Microsemi Corporation
5SGXEBBR2H43C2N
Intel
XC7VX485T-2FF1761C
Xilinx Inc.
A40MX04-3PQ100
Microsemi Corporation
LFE2-50E-6F672I
Lattice Semiconductor Corporation
5CEFA4U19C7N
Intel