Manufacturer Part Number | 2N3108 |
---|---|
Future Part Number | FT-2N3108 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N3108 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
Current - Collector Cutoff (Max) | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA,1V |
Power - Max | 800mW |
Frequency - Transition | - |
Operating Temperature | - |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N3108 Weight | Contact Us |
Replacement Part Number | 2N3108-FT |
2N6281
Microsemi Corporation
2N6284
Microsemi Corporation
2N6286
Microsemi Corporation
2N6287
Microsemi Corporation
2N6296
Microsemi Corporation
2N6297
Microsemi Corporation
2N6298
Microsemi Corporation
2N6299
Microsemi Corporation
2N6300
Microsemi Corporation
2N6301
Microsemi Corporation
LFE2-12SE-7TN144C
Lattice Semiconductor Corporation
XC2V80-4FGG256I
Xilinx Inc.
XCKU035-L1FBVA676I
Xilinx Inc.
A54SX32A-PQ208I
Microsemi Corporation
APA600-PQ208M
Microsemi Corporation
5SGXMA7N2F40I2LN
Intel
XC2VP20-5FFG896I
Xilinx Inc.
EP3CLS70F780C8N
Intel
EPF6016QC208-3N
Intel
EP1SGX40GF1020C7
Intel