Manufacturer Part Number | 2N3014 |
---|---|
Future Part Number | FT-2N3014 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N3014 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 350mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 300nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 400mV |
Power - Max | 300mW |
Frequency - Transition | 350MHz |
Operating Temperature | - |
Mounting Type | Through Hole |
Package / Case | TO-206AC, TO-52-3 Metal Can |
Supplier Device Package | TO-52-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N3014 Weight | Contact Us |
Replacement Part Number | 2N3014-FT |
2N6280
Microsemi Corporation
2N6281
Microsemi Corporation
2N6284
Microsemi Corporation
2N6286
Microsemi Corporation
2N6287
Microsemi Corporation
2N6296
Microsemi Corporation
2N6297
Microsemi Corporation
2N6298
Microsemi Corporation
2N6299
Microsemi Corporation
2N6300
Microsemi Corporation
EPF6024ATC144-2
Intel
AGLN250V2-ZVQ100
Microsemi Corporation
EPF10K30EFI256-2
Intel
5SGXEA7K2F35I3LN
Intel
XC6VCX240T-2FFG1156C
Xilinx Inc.
A42MX09-FPLG84
Microsemi Corporation
AT40K10LV-3AJI
Microchip Technology
10AX090H2F34E1SG
Intel
5AGXFA5H4F35C5N
Intel
10AX022E3F29E1SG
Intel