Manufacturer Part Number | 2N2906 |
---|---|
Future Part Number | FT-2N2906 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N2906 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
Power - Max | 1.8W |
Frequency - Transition | 200MHz |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N2906 Weight | Contact Us |
Replacement Part Number | 2N2906-FT |
JANTX2N6308
Microsemi Corporation
JANTX2N6383
Microsemi Corporation
JANTX2N6384
Microsemi Corporation
JANTX2N6547
Microsemi Corporation
JANTX2N6674
Microsemi Corporation
JANTX2N6676
Microsemi Corporation
JANTXV2N1893
Microsemi Corporation
JANTXV2N1893S
Microsemi Corporation
JANTXV2N3418
Microsemi Corporation
JANTXV2N3418S
Microsemi Corporation
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
XC3S1000L-4FGG320C
Xilinx Inc.
M7A3P1000-PQG208
Microsemi Corporation
A1020B-PL68I
Microsemi Corporation
XC5VLX110T-2FFG1136C
Xilinx Inc.
M1AFS1500-2FGG676I
Microsemi Corporation
LFXP6C-3Q208I
Lattice Semiconductor Corporation
LFE2-20SE-6F256C
Lattice Semiconductor Corporation
10AX066H4F34I3LG
Intel
EP4SGX110FF35C4N
Intel