Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2DB1182Q-13
Manufacturer Part Number | 2DB1182Q-13 |
---|---|
Future Part Number | FT-2DB1182Q-13 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2DB1182Q-13 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 32V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
Power - Max | 10W |
Frequency - Transition | 110MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2DB1182Q-13 Weight | Contact Us |
Replacement Part Number | 2DB1182Q-13-FT |
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