Home / Products / Integrated Circuits (ICs) / Memory / 25AA160DT-E/MNY
Manufacturer Part Number | 25AA160DT-E/MNY |
---|---|
Future Part Number | FT-25AA160DT-E/MNY |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
25AA160DT-E/MNY Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM |
Memory Size | 16Kb (2K x 8) |
Clock Frequency | 10MHz |
Write Cycle Time - Word, Page | 5ms |
Access Time | - |
Memory Interface | SPI |
Voltage - Supply | 1.8V ~ 5.5V |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 8-WFDFN Exposed Pad |
Supplier Device Package | 8-TDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
25AA160DT-E/MNY Weight | Contact Us |
Replacement Part Number | 25AA160DT-E/MNY-FT |
34LC02T-I/MNY
Microchip Technology
34VL02T/MNY
Microchip Technology
LE25U20AQGW00TXG
ON Semiconductor
24LC64FT-E/MNY
Microchip Technology
24AA256T-E/MNY
Microchip Technology
24AA256T-I/MNY
Microchip Technology
24FC256T-I/MNY
Microchip Technology
24LC256T-I/MNY
Microchip Technology
25LC040AT-E/MNY
Microchip Technology
25LC160DT-I/MNY
Microchip Technology
LCMXO2-640ZE-1TG100I
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE115F23I8L
Intel
XC7VX415T-1FFG1157I
Xilinx Inc.
LFXP3E-4Q208I
Lattice Semiconductor Corporation
LCMXO2-4000HC-6FG484I
Lattice Semiconductor Corporation
LCMXO3L-640E-6MG121I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP20K100BC356-2N
Intel
EP4SGX360FF35C4
Intel