Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / 206CNQ200
Manufacturer Part Number | 206CNQ200 |
---|---|
Future Part Number | FT-206CNQ200 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
206CNQ200 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) (per Diode) | 100A |
Voltage - Forward (Vf) (Max) @ If | 860mV @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10mA @ 200V |
Operating Temperature - Junction | -55°C ~ 175°C |
Mounting Type | Chassis Mount |
Package / Case | PRM4 |
Supplier Device Package | PRM4 (Non-Isolated) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
206CNQ200 Weight | Contact Us |
Replacement Part Number | 206CNQ200-FT |
STTH506TTI
STMicroelectronics
STTH60AC06CP
STMicroelectronics
FST50100
Microsemi Corporation
FST30100
Microsemi Corporation
FST30100E3
Microsemi Corporation
FST50100E3
Microsemi Corporation
SBT250-04R
ON Semiconductor
STPS200170TV1
STMicroelectronics
STTH200L06TV1
STMicroelectronics
STTH10002TV1
STMicroelectronics
XC6SLX150T-3FGG676C
Xilinx Inc.
LFE2M70SE-6F1152I
Lattice Semiconductor Corporation
LCMXO3L-4300C-6BG324C
Lattice Semiconductor Corporation
5SGXEA3K2F40C3N
Intel
EP3SL200H780I3N
Intel
EP2AGX125DF25I3
Intel
5SGXEA9K2H40I3L
Intel
XC7VX485T-3FFG1157E
Xilinx Inc.
EP2AGX125EF29C5NES
Intel
EP1S30F780C8N
Intel