Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N6629
Manufacturer Part Number | 1N6629 |
---|---|
Future Part Number | FT-1N6629 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N6629 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 880V |
Current - Average Rectified (Io) | 1.4A |
Voltage - Forward (Vf) (Max) @ If | 1.4V @ 1.4A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50ns |
Current - Reverse Leakage @ Vr | 2µA @ 880V |
Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
Mounting Type | Through Hole |
Package / Case | A, Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -65°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N6629 Weight | Contact Us |
Replacement Part Number | 1N6629-FT |
JANS1N5615
Microsemi Corporation
JANTXV1N6622
Microsemi Corporation
JANTX1N5806
Microsemi Corporation
JANTX1N6622
Microsemi Corporation
1N5819-1
Microsemi Corporation
1N6759
Microsemi Corporation
1N6760
Microsemi Corporation
DSB1A100
Microsemi Corporation
DSB1A20
Microsemi Corporation
DSB1A30
Microsemi Corporation
XC7A50T-L1CSG325I
Xilinx Inc.
APA600-CGS624M
Microsemi Corporation
M1A3PE3000-2FGG484
Microsemi Corporation
AT40K20LV-3DQC
Microchip Technology
A42MX24-PL84M
Microsemi Corporation
AGL250V2-FGG144I
Microsemi Corporation
LCMXO3L-1300C-6BG256C
Lattice Semiconductor Corporation
EP1S40F780C6N
Intel
EPF10K30RC240-3
Intel
EP20K400ERC208-3
Intel