Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N6628US
Manufacturer Part Number | 1N6628US |
---|---|
Future Part Number | FT-1N6628US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N6628US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 660V |
Current - Average Rectified (Io) | 1.75A |
Voltage - Forward (Vf) (Max) @ If | 1.35V @ 2A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 30ns |
Current - Reverse Leakage @ Vr | 2µA @ 660V |
Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | A-MELF |
Operating Temperature - Junction | -65°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N6628US Weight | Contact Us |
Replacement Part Number | 1N6628US-FT |
DSB0.5A30
Microsemi Corporation
DSB0.5A40
Microsemi Corporation
DSB2810
Microsemi Corporation
DSB3A20
Microsemi Corporation
DSB3A30
Microsemi Corporation
DSB3A40
Microsemi Corporation
DSB5712
Microsemi Corporation
APT60S20SG/TR
Microsemi Corporation
APT60D100SG
Microsemi Corporation
APT60D120SG
Microsemi Corporation
LCMXO2-7000ZE-1TG144C
Lattice Semiconductor Corporation
A54SX16A-1FG144
Microsemi Corporation
M2GL010TS-1FG484I
Microsemi Corporation
APA750-PQ208
Microsemi Corporation
EP3CLS70F484I7
Intel
10M08DAF484C7G
Intel
EP4SE530H40I3
Intel
XCV100-5BG256C
Xilinx Inc.
LCMXO2-2000ZE-2BG256I
Lattice Semiconductor Corporation
EP2AGX45DF29C5N
Intel