Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N6625E3
Manufacturer Part Number | 1N6625E3 |
---|---|
Future Part Number | FT-1N6625E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N6625E3 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1100V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 1.95V @ 1.5A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 80ns |
Current - Reverse Leakage @ Vr | 1µA @ 1000V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | A, Axial |
Supplier Device Package | A, Axial |
Operating Temperature - Junction | -65°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N6625E3 Weight | Contact Us |
Replacement Part Number | 1N6625E3-FT |
MS1645
Microsemi Corporation
JANTX1N5615
Microsemi Corporation
JANS1N5806
Microsemi Corporation
JANTX1N5617
Microsemi Corporation
JANS1N5615
Microsemi Corporation
JANTXV1N6622
Microsemi Corporation
JANTX1N5806
Microsemi Corporation
JANTX1N6622
Microsemi Corporation
1N5819-1
Microsemi Corporation
1N6759
Microsemi Corporation
APA450-PQ208I
Microsemi Corporation
5SGXMA3E2H29I2LN
Intel
5SGXEA4K3F35C4N
Intel
XC5VLX30-3FF324C
Xilinx Inc.
XCV200-5BG256I
Xilinx Inc.
A42MX24-1PLG84M
Microsemi Corporation
M1AGL600V5-FG144I
Microsemi Corporation
EP2AGX95EF29C4N
Intel
EP3SE110F780I3N
Intel
HC20K600BC652
Intel