Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5822US
Manufacturer Part Number | 1N5822US |
---|---|
Future Part Number | FT-1N5822US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5822US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 40V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 500mV @ 3A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 40V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, B |
Supplier Device Package | B, SQ-MELF |
Operating Temperature - Junction | -65°C ~ 125°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5822US Weight | Contact Us |
Replacement Part Number | 1N5822US-FT |
1N482B
Microsemi Corporation
1N484B
Microsemi Corporation
1N5194
Microsemi Corporation
1N5195
Microsemi Corporation
1N5196
Microsemi Corporation
1N648-1
Microsemi Corporation
1N6675
Microsemi Corporation
1N6676
Microsemi Corporation
DSB0.2A20
Microsemi Corporation
DSB0.2A40
Microsemi Corporation
A40MX02-1VQ80M
Microsemi Corporation
XC4010XL-2PQ100C
Xilinx Inc.
A3P1000-PQ208M
Microsemi Corporation
A40MX04-3PL68
Microsemi Corporation
APA600-FG676
Microsemi Corporation
A40MX02-1PQ100
Microsemi Corporation
LFE3-70EA-8FN672I
Lattice Semiconductor Corporation
LFE3-70EA-9FN672C
Lattice Semiconductor Corporation
LFE3-17EA-7FN484C
Lattice Semiconductor Corporation
10AX066K4F35I3LG
Intel