Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5817 R1G
Manufacturer Part Number | 1N5817 R1G |
---|---|
Future Part Number | FT-1N5817 R1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5817 R1G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 450mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1mA @ 20V |
Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-204AL (DO-41) |
Operating Temperature - Junction | -55°C ~ 125°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5817 R1G Weight | Contact Us |
Replacement Part Number | 1N5817 R1G-FT |
1N4007G A0G
Taiwan Semiconductor Corporation
1N5819 A0G
Taiwan Semiconductor Corporation
FR105G A0G
Taiwan Semiconductor Corporation
UF4007 A0G
Taiwan Semiconductor Corporation
HER106G A0G
Taiwan Semiconductor Corporation
BA159G A0G
Taiwan Semiconductor Corporation
FR103G A0G
Taiwan Semiconductor Corporation
FR104G A0G
Taiwan Semiconductor Corporation
HER102G A0G
Taiwan Semiconductor Corporation
HER108G A0G
Taiwan Semiconductor Corporation
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel