Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5817-E3/53
Manufacturer Part Number | 1N5817-E3/53 |
---|---|
Future Part Number | FT-1N5817-E3/53 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5817-E3/53 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 20V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 750mV @ 3.1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1mA @ 20V |
Capacitance @ Vr, F | 125pF @ 4V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-204AL (DO-41) |
Operating Temperature - Junction | -65°C ~ 125°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5817-E3/53 Weight | Contact Us |
Replacement Part Number | 1N5817-E3/53-FT |
SB150-E3/73
Vishay Semiconductor Diodes Division
UF4004-E3/53
Vishay Semiconductor Diodes Division
1N4001GP-E3/73
Vishay Semiconductor Diodes Division
1N4005GP-E3/73
Vishay Semiconductor Diodes Division
1N4007E-E3/53
Vishay Semiconductor Diodes Division
1N5817-E3/73
Vishay Semiconductor Diodes Division
BA159-E3/73
Vishay Semiconductor Diodes Division
GP10-4007-E3/73
Vishay Semiconductor Diodes Division
SB130-E3/73
Vishay Semiconductor Diodes Division
SB260S-E3/73
Vishay Semiconductor Diodes Division
XC7S100-1FGGA484C
Xilinx Inc.
M1A3P1000-2FG256
Microsemi Corporation
LFE2M70E-6F1152C
Lattice Semiconductor Corporation
AT6003-2AI
Microchip Technology
EP1S20F484I6N
Intel
XC2VP40-6FFG1152C
Xilinx Inc.
AT6003-2JC
Microchip Technology
10AX115S2F45I2LG
Intel
EPF10K100ABC356-3
Intel
EP1C12F324C6
Intel