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Microsemi Corporation 1N5809US

MFG Part Number
1N5809US
Available Quantity
68050 Pieces
Reference Price
USD 9.04
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Microsemi Corporation
Brief Description
- DIODE GEN PURP 100V 3A B-MELF
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Diodes - Rectifiers - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
1N5809US.pdf
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1N5809US Specifications

Manufacturer Part Number 1N5809US
Future Part Number FT-1N5809US
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
1N5809US Status (Lifecycle) In Stock
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage @ Vr 5µA @ 100V
Capacitance @ Vr, F 60pF @ 10V, 1MHz
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Supplier Device Package B, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
1N5809US Weight Contact Us
Replacement Part Number 1N5809US-FT

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