Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5806
Manufacturer Part Number | 1N5806 |
---|---|
Future Part Number | FT-1N5806 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5806 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 3.3A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 25ns |
Current - Reverse Leakage @ Vr | 1µA @ 150V |
Capacitance @ Vr, F | 25pF @ 5V, 1MHz |
Mounting Type | Through Hole |
Package / Case | Axial |
Supplier Device Package | Axial |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5806 Weight | Contact Us |
Replacement Part Number | 1N5806-FT |
VS-ETU3006FP-M3R
Vishay Semiconductor Diodes Division
VS-MURB820-1HM3
Vishay Semiconductor Diodes Division
VS-MURB820HM3
Vishay Semiconductor Diodes Division
VS-MURB820TRLHM3
Vishay Semiconductor Diodes Division
VS-MURB820TRRHM3
Vishay Semiconductor Diodes Division
VS-SD1100C22C
Vishay Semiconductor Diodes Division
VS-SD1100C22L
Vishay Semiconductor Diodes Division
VS-SD1100C28J
Vishay Semiconductor Diodes Division
VS-SD1100C30C
Vishay Semiconductor Diodes Division
VS-SD1100C30L
Vishay Semiconductor Diodes Division
XC3S50AN-4TQ144I
Xilinx Inc.
LCMXO1200E-5TN144C
Lattice Semiconductor Corporation
LCMXO640E-5T100C
Lattice Semiconductor Corporation
XC7A100T-3FTG256E
Xilinx Inc.
AGL030V2-CSG81I
Microsemi Corporation
EP3SL70F484C4LN
Intel
10M50DAF484I7P
Intel
AGL125V2-QNG132I
Microsemi Corporation
LFE5U-25F-7BG256C
Lattice Semiconductor Corporation
EP20K200EBC356-1X
Intel