Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5806US
Manufacturer Part Number | 1N5806US |
---|---|
Future Part Number | FT-1N5806US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5806US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 25ns |
Current - Reverse Leakage @ Vr | 1µA @ 150V |
Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SQ-MELF, A |
Supplier Device Package | D-5A |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5806US Weight | Contact Us |
Replacement Part Number | 1N5806US-FT |
APT60D100SG
Microsemi Corporation
APT60D120SG
Microsemi Corporation
APT60S20SG
Microsemi Corporation
APT30SCD120S
Microsemi Corporation
APT20SCD120S
Microsemi Corporation
APT30S20SG
Microsemi Corporation
APT20SCD120B
Microsemi Corporation
CDS5711UR-1
Microsemi Corporation
LSM145 MELF
Microsemi Corporation
JANS1N5809
Microsemi Corporation
A3PN020-QNG68
Microsemi Corporation
XC3S1400A-4FT256I
Xilinx Inc.
XC6SLX16-3FT256C
Xilinx Inc.
XC7A200T-1FBG676I
Xilinx Inc.
A54SX08A-PQ208I
Microsemi Corporation
LFE5U-12F-7BG381C
Lattice Semiconductor Corporation
A3PN060-Z1VQG100I
Microsemi Corporation
XC5VLX220T-1FFG1738C
Xilinx Inc.
LCMXO640E-3M100C
Lattice Semiconductor Corporation
5CEFA4M13C8N
Intel