Home / Products / Discrete Semiconductor Products / Diodes - RF / 1N5712#T25
Manufacturer Part Number | 1N5712#T25 |
---|---|
Future Part Number | FT-1N5712#T25 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5712#T25 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Schottky - Single |
Voltage - Peak Reverse (Max) | 20V |
Current - Max | 35mA |
Capacitance @ Vr, F | 1.2pF @ 0V, 1MHz |
Resistance @ If, F | - |
Power Dissipation (Max) | 250mW |
Operating Temperature | -65°C ~ 200°C (TJ) |
Package / Case | DO-204AH, DO-35, Axial |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5712#T25 Weight | Contact Us |
Replacement Part Number | 1N5712#T25-FT |
UPP1001/TR13
Microsemi Corporation
UPP9401/TR7
Microsemi Corporation
UPP9401E3/TR7
Microsemi Corporation
BAT17,215
Nexperia USA Inc.
PMBD353,215
Nexperia USA Inc.
PMBD354,215
Nexperia USA Inc.
BAT17,235
Nexperia USA Inc.
PMBD353,235
Nexperia USA Inc.
1PS76SB17,115
Nexperia USA Inc.
UM9604
Microsemi Corporation
XC6SLX100T-2FGG484I
Xilinx Inc.
LCMXO640C-4FT256I
Lattice Semiconductor Corporation
EP2AGX95DF25I3
Intel
EP4SE530H35C3ES
Intel
LFE2-12SE-7F256C
Lattice Semiconductor Corporation
LFE3-95EA-8LFN484I
Lattice Semiconductor Corporation
5CEFA9U19C7N
Intel
5CGXFC7D6F31I7
Intel
EP3CLS150F780C8N
Intel
EP1SGX40GF1020I6N
Intel