Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5419E3
Manufacturer Part Number | 1N5419E3 |
---|---|
Future Part Number | FT-1N5419E3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5419E3 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 500V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.5V @ 9A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 250ns |
Current - Reverse Leakage @ Vr | 1µA @ 500V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | B, Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5419E3 Weight | Contact Us |
Replacement Part Number | 1N5419E3-FT |
MS104/TR8
Microsemi Corporation
MS104E3/TR12
Microsemi Corporation
MS104E3/TR8
Microsemi Corporation
MS105/TR12
Microsemi Corporation
MS105/TR8
Microsemi Corporation
MS105E3/TR12
Microsemi Corporation
MS105E3/TR8
Microsemi Corporation
MS106/TR12
Microsemi Corporation
MS106/TR8
Microsemi Corporation
MS106E3/TR12
Microsemi Corporation
XCS40XL-5PQG208C
Xilinx Inc.
XC7A15T-1FGG484I
Xilinx Inc.
A3PE3000-FG484
Microsemi Corporation
LCMXO1200E-3FTN256I
Lattice Semiconductor Corporation
A42MX16-1VQ100M
Microsemi Corporation
5SGSMD4K3F40I3N
Intel
5SGSED6N2F45C2N
Intel
EP2SGX90EF1152C3ES
Intel
LFE2M100SE-5FN900I
Lattice Semiconductor Corporation
5AGXBB7D4F35C4N
Intel