Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5416US
Manufacturer Part Number | 1N5416US |
---|---|
Future Part Number | FT-1N5416US |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5416US Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 3A |
Voltage - Forward (Vf) (Max) @ If | 1.5V @ 9A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 150ns |
Current - Reverse Leakage @ Vr | 1µA @ 100V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | E-MELF |
Supplier Device Package | D-5B |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5416US Weight | Contact Us |
Replacement Part Number | 1N5416US-FT |
MS105/TR8
Microsemi Corporation
MS105E3/TR12
Microsemi Corporation
MS105E3/TR8
Microsemi Corporation
MS106/TR12
Microsemi Corporation
MS106/TR8
Microsemi Corporation
MS106E3/TR12
Microsemi Corporation
MS106E3/TR8
Microsemi Corporation
MS108/TR12
Microsemi Corporation
MS108/TR8
Microsemi Corporation
MS108E3/TR12
Microsemi Corporation
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel