Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N4449 BK
Manufacturer Part Number | 1N4449 BK |
---|---|
Future Part Number | FT-1N4449 BK |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N4449 BK Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 150mA |
Voltage - Forward (Vf) (Max) @ If | 730mV @ 5mA |
Speed | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) | 4ns |
Current - Reverse Leakage @ Vr | 25nA @ 20V |
Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
Mounting Type | Through Hole |
Package / Case | DO-204AH, DO-35, Axial |
Supplier Device Package | DO-35 |
Operating Temperature - Junction | -65°C ~ 200°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N4449 BK Weight | Contact Us |
Replacement Part Number | 1N4449 BK-FT |
1N3909R
Microsemi Corporation
1N3910
Microsemi Corporation
1N3910A
Microsemi Corporation
1N3910AR
Microsemi Corporation
1N3910R
Microsemi Corporation
1N3911A
Microsemi Corporation
1N3911AR
Microsemi Corporation
1N3911R
Microsemi Corporation
1N3912
Microsemi Corporation
1N3912A
Microsemi Corporation
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel