Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 10ETF12S
Manufacturer Part Number | 10ETF12S |
---|---|
Future Part Number | FT-10ETF12S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
10ETF12S Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1200V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.33V @ 10A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 310ns |
Current - Reverse Leakage @ Vr | 100µA @ 1200V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB (D²PAK) |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
10ETF12S Weight | Contact Us |
Replacement Part Number | 10ETF12S-FT |
VS-10TQ045STRRHM3
Vishay Semiconductor Diodes Division
VS-12TQ035S-M3
Vishay Semiconductor Diodes Division
VS-12TQ035SHM3
Vishay Semiconductor Diodes Division
VS-12TQ035STRL-M3
Vishay Semiconductor Diodes Division
VS-12TQ035STRLHM3
Vishay Semiconductor Diodes Division
VS-12TQ035STRR-M3
Vishay Semiconductor Diodes Division
VS-12TQ035STRRHM3
Vishay Semiconductor Diodes Division
VS-12TQ040S-M3
Vishay Semiconductor Diodes Division
VS-12TQ040SHM3
Vishay Semiconductor Diodes Division
VS-12TQ040STRL-M3
Vishay Semiconductor Diodes Division
LCMXO2-4000ZE-3TG144C
Lattice Semiconductor Corporation
XC6SLX150-N3FG676I
Xilinx Inc.
APA600-PQG208I
Microsemi Corporation
EP1S10F484C5N
Intel
EP1S10F484C6
Intel
A54SX32A-TQ100M
Microsemi Corporation
LCMXO1200E-3M132I
Lattice Semiconductor Corporation
10AX090U3F45I2LG
Intel
5CGXFC4C6M13C7N
Intel
EP3C55F780C7
Intel