Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N3960
Manufacturer Part Number | JANTXV2N3960 |
---|---|
Future Part Number | FT-JANTXV2N3960 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/399 |
JANTXV2N3960 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 30mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 1V |
Power - Max | 400mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 (TO-206AA) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N3960 Weight | Contact Us |
Replacement Part Number | JANTXV2N3960-FT |
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