Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / JAN2N3810
Manufacturer Part Number | JAN2N3810 |
---|---|
Future Part Number | FT-JAN2N3810 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/336 |
JAN2N3810 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
Power - Max | 350mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-78-6 Metal Can |
Supplier Device Package | TO-78-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N3810 Weight | Contact Us |
Replacement Part Number | JAN2N3810-FT |
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